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| The item can replace IRLML6401 Approved by: Checked by: Issued by: SPECIFICATION PRODUCT: P-Channel High Density Trench MODEL: MAR 6 4 0 1 SOT23 HOPE MICROELECTRONIC CO.,LIMITED Tel:+86-755-82973805 Fax:+86-755-82973550 Page E-mail: sales@hoperf.com of http://www.hoperf.com P-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID MAR6401 FEATURES Super high dense cell trench design for low RDS(on). Rugged and reliable. SOT-23-3L package. RDS(on) (m-ohm) Max 64 @ VGSR = -10V -30VR -4.2AR 75 @ VGSR = -4.5V 120 @ VGS = -2.5V D SOT-23-3L D S G MARKING:A19T G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation a a a Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit -30 12 -4.2 -16 -2.2 1.25 - 55 to 150 Unit V V A A A W C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Parameter Thermal Resistance,Junction-to-Ambient a Note a. Surface Mounted on FR4 Board , t 5sec . b. Pulse TestPulse width 300us , Duty Cycle 2% . Symbol RthJA Typc 75 Max 100 Unit C/W Tel:+86-755-82973805 Fax:+86-755-82973550 2 E-mail: sales@hoperf.com http://www.hoperf.com 2 ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter Symbol Condition Min Typc Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSSR IDSS IGSS VGS = 0V , ID = -250uA -R 30 -1 -100 V uA nA Zero Gate Voltage Drain Current Gate-Body Leakage VDSR = -24V , VGSR = 0V VGS = -12V , VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage b VGS(th) VDS = VGS , ID = -250uA VGS = -10V , ID = -4.2A -0.5 -1.3 64 75 120 V m-ohm m-ohm m-ohm Drain-Source On-State Resistance RDS(on) VGSR = -4.5V , IDR = -3.0A VGSR = -2.5V , IDR = -1.2A DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD c b VGS = 0V , IS = -1.0A -1.2 V DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS VDS = 15V , VGS = 0V COSS f = 1.0MHz CRSS c 1325 172 140 pF pF pF SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Note b. Pulse TestPulse width 300us , Duty Cycle 2% . c. Guaranteed by design , not subject to production testing . tD(ON) tr tD(OFF) tf VDD = -15V , ID = -1A VGEN = -4.5V RL = 15 ohm RGEN = 10 ohm VDS = -15V ID = -1A VGS = -10V 5 3 30 10 27.8 3.2 2.72 ns ns ns ns nC nC Qg Qgs Qgd nC Tel:+86-755-82973805 Fax:+86-755-82973550 3 E-mail: sales@hoperf.com http://www.hoperf.com 3 |
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